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Design and Implementation of Ultra Low Dropout Regulator Fulltext
نويسنده:
[ Ehsan Rokhsat ] - DigitalClone Corporation
خلاصه مقاله:
Today low dropout regulators are widely used in Low Power circuits. This paper presents the design and implementation of a LDO regulator with high current and very low dropout voltage. One of the advantages of this circuit is using an n-channel MOSFET as power transistor. In this circuit Gate Voltage of MOSFET should be higher than input voltage, which is carried by a voltage up converter. The Implemented LDO is designed for a voltage of 11V which with a current of 1A the maximum Dropout will be 25mV, which shows improvement in comparison to conventional regulators.
كلمات كليدي:
Dropout, Pass Element, Charge Pump
[ لينک دايمي به اين صفحه: http://www.civilica.com/Paper-CIMRDC06-CIMRDC06_027.html ]
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