Tunneling Magnetoresistance in Double –Barrier Magnetic Tunnel Junction

In the present paper, tunnelling current and magnetoresistant are calculated analytically in the nearly free electron approximation for magnetic tunnel junction (MTJ), consisting two ferromagnetic layers separated by two adjacent insulating barriers which have different barrier heights and different dielectric constants. The results of our calculation show for the whole range of bias voltages the value of TMR in the structure with two adjacent barriers is higher than the value of TMR in the structure with single barrier. Although the decreasing rate of TMR value vs bias voltage for two kinds of structures, mentioned above , has no considerable difference.

کلیدواژه ها:

Magnetic tunnel junctions ، Tunnel current ، Tunnel magnetoresistance