On the dependence of structural and electrical properties of chromium oxide nano layers on annealing temperatures

This paper reports the annealing temperature effect on structural and electrical properties of chromium oxide nano layers. Chromium nano layers were deposited on silicon substrate by DC magnetron sputtering and then post-annealed at different temperatures. Crystallographic structure, surface morphology and electrical properties of these layers were investigated by XRD, AFM and four point probe instrument, respectively. The XRD result showed Cr(3)O structure for annealed samples at 200 and 300 oC and Cr(2)O(3) structure for annealed samples at 500 and 600 oC. X-ray diffraction pattern of annealed layers at 400 oC also depicts a mixed structure of Cr(3)O and Cr(2)O(3). The AFM result showed smooth surface with small grains for annealed layers at lower temperature (200 and 300 oC), while formed layers at higher annealing temperature (500 and 600 oC) had a rough surface with large grains. The resistivity measurements showed that increasing of annealing temperature up 400 oC caused increasing of resistivity, when increasing of temperature after 400 oC had an inverse effect.

کلیدواژه ها:

Nano layer ، Chromium oxide ، Structure ، Morphology ، Resistivity