Very Low-Voltage Operation Capability of CMOS Ring Oscillators and Logic Gates

The operation of a CMOS ring oscillator with supply voltage values as low as ~80 mV are experimentally investigated. The low-voltage operation of the ring oscillator based on a single inverter, is analyzed. The use of body voltage of MOS transistors as a means for controlling the frequency of oscillation of CMOS ring oscillators are demonstrated. The feasibility of very low-voltage operation of logic CMOS gates such as NAND gate is confirmed with simulation.

کلیدواژه ها:

Low-voltage ، low-power CMOS ، subthreshold ، ring oscillator ، VCO ، substrate biasing