Smart Etch or Plasma Hydrogenation-AssistedH igh Aspect Ratio Etching of Silicon

Achieving a novel plasma hydrogenation assisted vertical etching of silicon is reported. The process uses a sequential ydrogenation/oxygenation and reactive ion etching to stimulate the vertical removal of the exposedS i substrotew ithout damaging the sidewalls. 3-D structures with aspect ratios of 30:I and features as small as 0.7um have been realized. Also high aspect ratio etching of PET plastics by means of directional ultra-violet illumination ,s reported. Fabrication of various structures suitable for sensor applications is reported.

کلیدواژه ها:

Vertical etching ، Micromachining ، Reactive Ion Etching ، hydrogen Plasma ، Ultra- Violet ، PET ، Silicon.