An Optimized High Gain CMOS LNA using Simulated Annealing and Modified Genetic Algorithm

This paper proposes two simulation-based evolutionary and statistical approaches for designing a 18 GHz Low Noise Amplifier (LNA) with using 0.13 μm technology. Based on genetic algorithm (GA), simulated annealing (SA), the Levenberg- Marquardt (LM), and circuit simulator, the simulation-based methods simultaneously optimize the electrical specifications, such as S-parameters, the noise figure, and the input-referred third-order intercept point in the process. In the designed LNA, the structure of one-stage cascode amplifier with source inductive degeneration is used. This LNA draws 12 mA from the 1.2V power supply. The LNA demonstrates 17.62 dB for S21 and 18.6 dB for MAG at the peak gain frequency of 17.49 GHz. The optimized simulation results show that the proposed LNA has a noise figure (NF) of 1.8 dB in the 17.49 GHz frequency. For large input signal level, P1dB, OIP3, and IIP3 are: -8 dBm, +23 dBm and +11 dBm, respectively

کلیدواژه ها:

Low noise amplifier (LNA) ، Genetic algorithm (GA) ، Simulated annealing (SA