A Numerical Study on Base Geometry of Transistor Laser: Quantum-Well Location Effect

We report a numerical method based on both experimental data and physical model to simulate quantum-well dislocation effect inside the base region of a transistor laser of 150μm cavity length. Utilizing a special calculation method, base recombination lifetime is simulated for different quantumwell locations. In order to investigate optical bandwidth dependence on quantum well location coupled carrier photon equations are analyzed. Simulation shows significant enhancement in optical bandwidth (up to ~51GHz) due to moving the quantum well toward collector while current gain decreases. Also reported in this work is an optimum place for quantum-well to locate in the base region in order to maximize the bandwidth.

کلیدواژه ها:

Transistor Laser ، Heterojunction Bipolar Transistor ، Quantum-Well ، Base Recombination Lifetime ، Optical frequency response