Positive Charges at Buried Oxide Interface of RESURF: An Analytical Model for Surface Electric Field

A new analytical model of RESURF transistor on SOI technology with positive charges at the buried oxide interface is proposed. Two-dimensional Poisson equation is solved for thenew structure and surface potential and surface electric field is derived. Also, the validity of this novel model is demonstratedby comparing with numerical simulation of ATLAS simulator. The influence of drift region doping, density of positive chargesat the buried oxide (BOX) interface and also the thicknesses offield oxide and BOX are discussed in this paper. This approach is suitable to enhance the breakdown voltage with increasing the electric field at the BOX.

کلیدواژه ها:

RESURF ، electric field ، breakdown voltage ، analytical model