An Adaptive Current Mirror Feedback in SRAM Cells for Suppressing NBTI Degradation

سال انتشار: 1392
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 1,383

فایل این مقاله در 5 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

ICEEE05_018

تاریخ نمایه سازی: 3 آذر 1392

چکیده مقاله:

this paper focuses on introducing a new circuitry method in order to suppress Negative Bias Temperature Instability (NBTI) effects on SRAM cells. NBTI effect canseverely degrade the power and stability characteristics of SRAM cells during their operation years. The proposed method can be applied to every single cell and catch in order to suppress the NBTI variability in the threshold voltage of the top PMOS transistors. The method uses a feedback currentmirror loop to set the body voltage of the PMOS when their threshold voltages are increase due to NBTI effect. Differentcell topologies are employed in order to evaluate the effectiveness of the method. The comparison with the conventional SRAM shows that new structure with suppressing the NBTI can improved the read SNM 10.5%(11%, 10.2%) and hold SNM 36%(25%, 9.6%) for 5T, 6T and 9T structure respectively

کلیدواژه ها:

نویسندگان

Mohsen Jafari

School of Electrical and Computer, Collage of Engineering, University of Tehran, Tehran, Iran

Mohsen Imani

School of Electrical and Computer, Collage of Engineering, University of Tehran, Tehran, Iran