Improving the performanceof Tunnel Field Effect Transistor (TFET) based on Optimization Algorithm

In this article a Tunneling Field Effect transistor with the channel length 20 nm has been introduced and for the first time presents we optimize the size of devicewith multiplayerneural network(MLP)and simulateit with the source/channel junction is AlSb/

کلیدواژه ها:

band-to-band tunneling ، ، hetero-junction ، gated p-i-n diode ، sub threshold swing ، tunneling transistor ، neural network ، TFET