An Investigation on Dielectric Properties of Diced Turquoise for Insulating Applications

Increased demand for high performance, low power, scaled-down, and high density microelectronic devices is continuously urged the fabrication process toward nanoscaled ultra thin-body and nano technologies such as 22nm process nodes and less. Challenges in the scaled silicon-based substrate devices such as short channel effects (SCEs) caused to develop the silicon on insulator (SOI). The main objective of this study is an investigation on the dielectric properties of turquoise, reporting for the first time, as a potential replacement material in the SOI technology. Turquoise samples, provided from Firoozeh Mine of Neyshapur, have been previously undergone an FTIR analysis and reported for existence any Si-O-Si bonds and then have been diced into smaller size of 1×1×0.4 mm3 for measurement of dielectric properties. The measurements are shown that the dielectric of the samples ranges from 85 to 122 for the thicknesses of 400 ± 5 μm.The results show that the material has the potential for being used as semi-insulator high-k material substrate in the aforementioned process nodes.Keywords— Turquoise, high k-ma

کلیدواژه ها:

Turquoise ، high k-material ، dielectric ، insulator scaled device