An Ultra-Thin SOI PMOSFET with the high-k HfO2 dielectric

As the CMOS technology scale down to sub-20nm,the most important matter of designing of the device is Control of the short channel effects”. A certain method for controlling the short channel effects at sub-20nm dimension are proposed by changing the whole structure of device offering FinFet and SOI. SOI structures consist of a top single-crystal silicon layer, either separated from the bulk substrate by an insulating layer (for instance SiO2) or directly supported by an insulating substrate. In this paper an Ultra-Thin SOI PMOSFET with the high-k HfO2 dielectric is presented which its channel length is 8 nm. The behavior of this device is simulated with SILVACO software and electrical properties of this device is evaluated.

کلیدواژه ها:

SOI ، PMOSFET ، High-k dielectric ، SILVACO