Study of Quantum Transport in Nanoscale Double Gate Schottky SOI MOSFET on Arbitrarily Orientated Wafers:Non-equilibrium Green's Function Formalism

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structuralparameters on the performance of this device within Nonequilibrium Green's Function (NEGF) formalism. Quantum confinement increases the effective Schottkybarrier height (SBH). (100) orientation provides lower effective Schottky barrier height in comparison with (110) and (111) wafers. As the channel length of ultrathin body SBMOSFET scales down to nanoscale regime, especially for high effective SBHs, quantum confinementis created along the channel and current propagates through discrete resonance states. We have studied the possibility of resonant tunneling in SBMOSFET.Resonant tunneling for (110) and (111) orientations appear at higher gate voltages.

کلیدواژه ها:

Schottky MOSFET ، quantum transport ، mode space approach ، Non-equilibrium Green's Function (NEGF)formalism ، resonant tunneling