Synthesis and Thermoluminescence of Boron-doped Germanium nanowires

Germanium nanowires (GeNws), because of their advanced electrical properties [1], and facile chemical synthesis of single crystal GeNws at low temperatures well below 400◦C [2] have attracted considerable attentions. Various synthesis methods for crystalline GeNws have been reported using Au nanoparticles as seeds, including chemical vapor deposition(CVD)[3,4],Physical vapor deposition(PVD)[4] and solvo-thermal reactions[2].In these methods Au nanoparticles have used as catalyst for growth of GeNws. For synthesis of GeNws, in some cases Ni has been used as catalyst and nucleating centers [5], but in this case it is not necessary to use high vacuumed chambers. In some other researches GeI4 and super poisonous gas GeH4 (German) have used as Germanium source too [6].In this work we have used GeCl4 as germanium source that is so safer than German, also the process has done under atmosphere pressure without requiring high vacuum equipments. Also the thermoluminescence (TL) properties of this structure have been investigated and kinetic parameters of the main TL glow peak have been determined