Effect of Gate Location on Carbon Nanotube Field Effect Transistor Characteristics

Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for Field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic . The non-equilibrium Green's function (NEGF) method has been successfully utilized to investigate the characteristics of nanoscale device such as carbon nanotube (CNT) based transistors [1]. This device is simulated by solving coupled Poisson and Schrodinger equations. Non-equilibrium Green’s function (NEGF) method is used to investigate the transport properties. The uncoupled mode space approach is used to reduce the computational burden[2]. At recent work effect of gate electrostatic on output characteristic in CNTFET has been investigated[3]. But in this paper the effect of gate length and effect of change in gate location between source and drain is investigated.