Post-Fabrication Optimization Of Spin Transport Properties In Spin Valve Using Gate Bias Voltange

Abstract:In this paper we study electron and spin transport across a 2DEG structure, in which ballistic transport is assumed. We find that the transport properties of the device, such as the transmission probability, the SI efficiency and the MR ratio, all exhibit oscillatory behavior when electron energy is varied. The basis of these oscillations is the resonant transport across the 2DEG. By utilizing this resonant transport property, we further propose a SC-based gate controlled MR device that could perform the function of a metallic SV, but with the advantage that its MR can be optimized (post-fabrication) and its stability enhanced by controlling a gate bias voltage.We showed that short channel length(d=15 nm) and low effective mass(m=0.014) reduces MR oscillation frequency, a feature we call stabilization which makes MR optimization easy to carry out.

کلیدواژه ها:

spintronics ، spin valve ، spin conductance oscillations ، ballistic spin transport ، spin transport in 2DEG with