The effect of Al dopant concentration on ZnO surface roughness and optical properties

In this report we investigated the roughness, absorbance and band gap variation of ZnO in different at% Alconcentrations. The ZnO semiconductors containing different Al dopant concentrations are prepared by sol-gel spin coting method on glass substrates. To define absorbance peak and also band gap width, UV-Visible spectrometry is used. Forasmuch as roughness is an important factor in optoelectronic devices, atomic force microscopy (AFM) images are taken. Although the surface is gotten smoother in low doping, the roughness is increased by adding more dopant. The band gap is also decreased by adding dopant and absorbance peak shifts in higher wavelength.

کلیدواژه ها:

ZnO ، roughness ، Aluminium doping ، band gap ، sol-gel