Simulation of Graphane p-n junction Using Finite Difference Method

In this paper, the graphane p-n junction performance is simulated. The simulation method is based onsolving continuity equations by using finite difference method. In this simulation, the electrical field derivative effect in continuity equation is considered while in earlier simulation the derivative of electrical field was neglected. From our simulation results, it can be found that, the minority carrier distribution in graphane p-n junction is different compared to regular p-n junction. Also, it can be found that ,the graphane junction capacitance is independent of applied voltage.By creation vacancies in graphane structure , the electrical characteristics of graphane p-n junction can be changed.

کلیدواژه ها:

Graphane ، Graphene ، p-n junction ، continuity equations ، finite difference