Structure and electrical properties of CIS thin film solar cells by electrochemical method

Chalcopyrite CIS have been regarded as promising absorbing materials for thin-film solar cells withwidespread commercialization prospects. The most critical material properties of a CIS absorption layer that affect theoverall PV performance include itsmicrostructure and composition at a given band gap energy.In this paper, we report the preparation of CuInSe2 (CIS) using Electrodeposition method. Experimental and theoreticalstudies of the structural properties of Copper Indium diselenide thin films have been performed.Thin films of CIS weredeposited on Molybdenum/glass substrates by chemical bath deposition. Electrodeposition was carried out in acidicaqueous solutions at about pH 2.15. The electrodeposited Cu–In alloys were annealed under Se atmosphere attemperatures between 400 and 600 ◦C to produce CIS absorbers. Films were characterized by XRD analysis. From theXRD results of the films, it is found that the films are of chalcopyrite type structure. The lattice parameter weredetermined as B 5.78^I and 11.57^I.

کلیدواژه ها:

Solar Cell ، Electrochemical Method ، Thin Film ، CIS