Synthesis and Study of Characterization of ITO Thin Film

In this research, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thinfilm on a glass substrate at room temperature. Subsequently, the film was annealed at 200oC, for 1 h in air atmosphere.The surface characteristics of this ITO thin film are then investigated by means of XRD (X-ray diffraction) and AFM(atomic force microscopy) method. XRD results of the film showed crystalline phase after heat treatment andconfirming the amorphous nature of films before it. We employed the results of AFM evident for estimating root-meansquareroughness (RMS) and height roughness (R).

کلیدواژه ها:

Electron beam evaporation ، ITO thin film