Electrical and optical properties of Low-E ITO thin films prepared by DC-magnetron sputtering

Thin films of Indium Tin Oxide (ITO) were prepared by DC magnetron sputtering by using ceramic ITO target. To achieve the concerned electrical resistance and high reflection IR for making low emissivity coatings, first the effect of applied sputtering power then oxygen flow on the properties of films have been investigated. The other depositions parameters were kept constant. Transmission, reflection and sheet resistance of ITO have been measured. For ITO thin films deposited at 400ºC in oxygen flow of 3sccm a sheet resistance of 11.1Ω/sq, Average reflection in IR (λ=3-25μm) was 89.5% and transmission at λ= 550nm was 89.65%. For ITO with a sheet resistance of 10.9Ω/sq grown at 400ºC and 6.1sccm oxygen flow transmission at λ= 550nm was 90.31 %.

کلیدواژه ها:

Low-emissivity ، thin films ، ITO ، DC magnetron sputtering ، Electrical ، optical properties