LUMINESCENT PROPERTIES OF A3I B5III C9VI TYPE COMPOUNDS

Cathode- and photoluminescence spectra of complex semiconductors Ag3In5Se9 , Cu3Ga5Se9 and Cu3In5S9 in a wide range of temperature and excitation level of the crystal have been investigated. It is established that the luminescence spectra are equivalently formed by impurity and intrinsic emission bands. Shallow donor and acceptor levels formed by anioncation vacancies of the crystal lattice are major factors of the luminescence. Studying of the luminescence spectra of crystals thermally annealed in vapor of volatile component of the compounds has shown that a recombination mechanism of non-equilibrium charge carriers in many respects is determined by concentration of anioncation vacancies in the crystal. Thus depths of the energy levels formed by crystal lattice vacancies have been determined.

کلیدواژه ها:

photoluminescence ، cathodoluminescence ، anion-cation vacancies Ag3In5Se9 ، Cu3Ga5Se9 ، Cu3In5S9