An Ultra High Gain CMOS Low Noise Amplifier With Current-Reused Technique

This paper describes a CMOS LNA utilizing a current reuse technique for Bluetooth front-end receiver in a TSMC 0.18-μm process. The current reuse technique, the noise and gain performance is improved also, providing dual functions of impedance match and DC current sharing. A bias resistor of large value is placed between source and the body node to prevent body effect and reduce noise. The power gain and the minimal Noise Figure (NF) are two important factors for the circuits. Besides those factors, good linearity, and the lower power consumption are also desired. The LNA achieves a small signal gain of 22 dB. The LNA acquires an NF of 2.8 dB with an input return loss of - 28.6 dB and an output return loss of -17.5 dB. The LNA consumes 9.4 mW from a 1.8-V supply.

کلیدواژه ها:

low noise amplifier (LNA) ، noise figure (NF) ، current reuse technique