The Vital Role of Ultra Thin Silicon Oxide Gate Dielectrics

In dry thermal oxidation process with Si, the growth rate of the initial parts of the reaction is currently modeled with additional terms; besides the usual linear parabolic was time dependent. However,due to limitation in the process set up, it was found in literature and in patent; these methods did notproduce oxides less than 1.5 nm thick, often assumed equal to the native thickness. Attempt made to grow oxides in a furnacewith dry oxygen, including cycles of cleaning and annealing in Ar. The effects limit the thickness to about 1.5 nm was investigated. These oxides were evaluated for the resulting quality of the interface of the oxides,with low temperature layer-by-layer methods