Smart Etch or Plasma Hydrogenation-AssistedH igh Aspect Ratio Etching of Silicon
عنوان مقاله: Smart Etch or Plasma Hydrogenation-AssistedH igh Aspect Ratio Etching of Silicon
شناسه ملی مقاله: ICEE15_368
منتشر شده در پانزدهیمن کنفرانس مهندسی برق ایران در سال 1386
شناسه ملی مقاله: ICEE15_368
منتشر شده در پانزدهیمن کنفرانس مهندسی برق ایران در سال 1386
مشخصات نویسندگان مقاله:
Azimi - Thin Film Lab,E CED ept.,University of Tehran
Sammak - Thin Film Lab,E CED ept.,University of Tehran
Khadem Hosseinieh - Thin Film Lab,E CED ept.,University of Tehran
Mohajerzadeh - Thin Film Lab,E CED ept.,University of Tehran
خلاصه مقاله:
Azimi - Thin Film Lab,E CED ept.,University of Tehran
Sammak - Thin Film Lab,E CED ept.,University of Tehran
Khadem Hosseinieh - Thin Film Lab,E CED ept.,University of Tehran
Mohajerzadeh - Thin Film Lab,E CED ept.,University of Tehran
Achieving a novel plasma hydrogenation assisted vertical etching of silicon is reported. The process uses a sequential ydrogenation/oxygenation
and reactive ion etching to stimulate the vertical removal of the exposedS i substrotew ithout damaging the sidewalls. 3-D structures with aspect ratios of 30:I and features as small as 0.7um have been realized. Also high aspect ratio etching of PET plastics by means of directional ultra-violet illumination ,s reported. Fabrication of various structures suitable for sensor applications is reported.
کلمات کلیدی: Vertical etching, Micromachining, Reactive Ion Etching, hydrogen Plasma, Ultra- Violet, PET, Silicon.
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/25436/