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گواهی نمایه سازی مقاله Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability

عنوان مقاله: Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability
شناسه (COI) مقاله: TDCONF01_113
منتشر شده در اولین همایش ملی الکترونیکی پیشرفت های تکنولوژی در مهندسی برق، الکترونیک و کامپیوتر در سال ۱۳۹۳
مشخصات نویسندگان مقاله:

H Tasdighi - Department of Electrical and Computer Engineering, University of Kashan, Kashan, Iran
D Dideban - Institute of Nanoscience and Nanotechnology, University of Kashan, Iran

خلاصه مقاله:
Static RAM cells are among the most important fundamental blocks of digital circuits. These cells go through considerable statistical fluctuations as a result of scale change of the bulk-CMOS technology to nanometer scales. This scale change is aimed to increase data storage density.It also influences static RAM stability significantly[1, 2]. In this research, the statistical sensitivity of static noise margin was analyzed in non-ideal conditions and the statistical stability of SRAM cells was examined to recognize weak cells

کلمات کلیدی:
Static Noise Margin(SNM) , Random Dopant Fluctuations(RDF) , Line Edge Roughness(LER) , Polysilicon Gate Granularity(PGG).

صفحه اختصاصی مقاله و دریافت فایل کامل: http://www.civilica.com/Paper-TDCONF01-TDCONF01_113.html