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گواهی نمایه سازی مقاله A review on the performance of the fourth fundamental bilateral circuit element (memristor) in different circuits

عنوان مقاله: A review on the performance of the fourth fundamental bilateral circuit element (memristor) in different circuits
شناسه (COI) مقاله: TDCONF01_124
منتشر شده در اولین همایش ملی الکترونیکی پیشرفت های تکنولوژی در مهندسی برق، الکترونیک و کامپیوتر در سال ۱۳۹۳
مشخصات نویسندگان مقاله:

Mohammad Rasoul Rahmatian - Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran
Hamed Rahimzadeh - Department of Electrical Engineering, College of Engineering, Kermanshah Branch, Islamic Azad.University, Kermanshah, Iran

خلاصه مقاله:
The present study considers the reviews done on memristor in the recent years, and also investigates three different models of memristor structure including linear, non-linear and the performance of memristor in high-chaos circuits. As the results of the simulation indicate non-linear model has a better performance than linear one. Two distinct features of memristor include low power consumption and its capability to have a memory

کلمات کلیدی:
memristor, high-chaos circuits, structure linear and non-linear

صفحه اختصاصی مقاله و دریافت فایل کامل: http://www.civilica.com/Paper-TDCONF01-TDCONF01_124.html