M shahryari - Department of physics, Faculty of Science, Islamic Azad University, Karaj Branch, Karaj, Iran
sh nanekarani - Department of physics, Faculty of Science, Islamic Azad University, Karaj Branch, Karaj, Iran

In this paper, Ti/p- si schottky diode has been fabricated by deposition a titanium film on p-si substrate by dc magnetron sputtering. Electrical properties schottky junction inclusive 3 main parameters: ideality factor (n), series resistance (Rs) and barrier height (Φb) were determined by 3 analysis methods: current-voltage, Cheung function and Norde function. As result the calculated values outcome by 3 analysis methods averagely were obtained equal to 2.475, 27.07kΩ and 0.88 ev, respectively.Direct calculation series resistance and compare that with the average value obtain from 3 analysis methods that mentioned illustrate that without attention to XRD analysis can deduce at least one oxide phase was formed on Ti layer.

Schottky diode, Titanium Layer, Series resistance, Oxide phase