Kamran Assadian - electrical department at Azad University ,Hamadan , Iran

A low noise, low distortion wideband IF preamplifier is presented with a voltage gain of 16.3, using a 0.6-μ m CMOS process. 3 dB bandwidth of 64 MHz is obtained with total current drain being 1.83 mA from a 2.7 volt power supply, total power consumption is less than 5 mW. IIP3 of -19.2 dBm and NF of 6.15 dB are achieved