Thermal Behavior Comparison of a Novel Extreme Triple Asymmetric AlGaInP Laser Diode with Conventional Symmetric Structure

In this investigation, for the first time, improved thermal behavior of a red AlGaInP laser diode is demonstrated by introducing a new extreme triple asymmetric waveguide structure. The thermal behavior of the conventional symmetric and the new extreme triple asymmetric laser structures are theoretically investigated using simulation software Photonic Integrated Circuit Simulator in 3 dimensions. 3 dimensional simulations of carrier transport, optical wave -guiding and self-heating are combined self-consistently in the software. Numerical results show that the thermal heat power distribution of the new proposed structure is significantly improved in comparison to the conventional symmetric structure. The reasons of improvement are discussed in this investigation.

کلیدواژه ها:

AlGaInP laser diode ، Simulation ، Extreme triple asymmetric waveguide ، PICS3D.