Thermal effects analysis and comparison of the 22nm silicon-on-diamond transistor with the similar silicon-on-insulator transistor and reduction of the off current of neighboring transistors

In this paper, using hydrodynamic simulations, thermal effects of silicon-on-insulator (SOI) and silicon-on-diamond (SOD) transistors with 22nm channel lengths and effects of buried diamond layer of silicon-on-diamond transistor in transferring heat to the side transistors have been analyzed. Because of high thermal conductivity of diamond versus low thermal conductivity of silicon dioxide, heat transfer in silicon-on-diamond transistors is quicker and their lattice temperature becomes less than the temperature of the similar silicon-on-insulator transistors. In Integrated circuits by using SODs instead of SOIs, within uniform heat conduction of diamond layer, neighboring transistors will have the same temperature as the active transistor. The heat evacuation, will increase the temperature of the neighboring transistors and by this, an undesirable result of increasing their off current (Ioff) will occur. In order to decrease the lattice temperature of the neighboring transistors we have reduced the thickness of buried diamond layer, due to this change, lattice temperature of side transistors will be decreased and also their off current will be improved.

کلیدواژه ها:

Mosfet ، Silicon-on-diamond ، Silicon-on-insulator ، Self-heating ، Off current ، Bulk transistor