Competition of Contact Resistance and Ferroelectric Gate Oxide on the Performance of Double-Gate MoS2 Monolayer FET

سال انتشار: 1397
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 372

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شناسه ملی سند علمی:

CMTS02_119

تاریخ نمایه سازی: 29 تیر 1398

چکیده مقاله:

In this work, A Ferroelectric-FET (Fe-FET) with two dimensional MoS2 as the channel material is explored. Fe-FET with contact resistance is compared with no contact resistance. Top of the barrier model along with ferroelectric model is used to investigate performance of Fe-FET. Contact resistance can highly affect current-voltage characteristic. FET with contact resistance needs higher voltage for saturation. Ferroelectric with negative capacitance increases gate capacitance and decreases sub-threshold swing. It is shown sub-threshold swing can be tuned with ferroelectric thickness.

کلیدواژه ها:

Contact resistance ، Ferroelectric ، Top of the Barrier ، MoS2

نویسندگان

Shoeib Babaee Touski

Department of Electrical Engineering, Hamedan University of Technology, Hamedan ۶۵۱۵۵, Iran

Manouchehr Hosseini

Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran.