The Performance enhancement of Tunneling FET with Germanium in the Source

In this work, the source of thin film TFET is split into two parts, one part from silicon and other from germanium. The Silvaco ATLAS software is used to simulate the proposed TFET. We observed the Sub-threshold swing and ON-OFF ratio increase for this structure relative to conventional TFET. Two structures, one germanium close to the top gate and other germanium close to the back gate, is studied. We observed when silicon is close to the top gate and germanium close to the back gate indicates better performance.

کلیدواژه ها:

Tunneling FET(TFET) ، band-to-band-tunneling (BTBT) ، SiGe ، Silvaco.