Epitaxial Si-Ge Heterostructures and Nanostructures for Optical and Electrical Applications

We present SiGe/Si heterostructures and nanostructures grown by plasma-enhanced chemical vapour deposition (LEPECVD) and processed by optical lithography, electron beam lithography as well as wet chemical and reactive ion etching. Structures based on strained-Ge quantum wells exhibit excellent electrical and optical properties, like hole mobilities up to 120,000 cm2/Vs and sharp excitonic features in the absorption spectra. New device functions are obtained on modulation doped structures patterned by nanolithography

کلیدواژه ها:

Epitaxy ، quantum well ، split-gate ، modulator ، silicon-germanium