Influence of Bragg Mirror Thickness on Performance of Multi-Quantum-Wells BTJ-PhC VCSEL

In this paper, the Bragg mirror thickness in an InP-based buried tunnel junction photonic crystal vertical-cavity surface-emitting laser (BTJ-PhC VCSEL) was varied and its influence on the characteristics of the device was investigated in terms of the reflectance spectrum, absorbance spectrum and threshold current for operation at a wavelength of 1550 nm. The lattice matched device structure was considered on an InP substrate using III-V quaternary semiconductor alloys for Bragg mirror and InGaAsP based unstrained multi-quantum-wells (MQW) for the active layer. The reflectivity of mirrors are 99% for the top distributed Bragg reflector (DBR) that consisting of 30 pairs of GaAs/AlGaAs layers, and 99.9% for the bottom DBR that consisting of 28 pairs of GaAs/AlAs layers. The results show that the bottom DBR thickness has the strongest influence on the reflectance and absorbance spectrums performance.

کلیدواژه ها:

Distributed Bragg reflector (DBR) ، Reflectance spectrum ، Absorbance spectrum ، Buried tunnel junction (BTJ) ، Photonic crystal (PhC) ، Vertical-cavity surface-emitting laser (VCSEL)