A Numerical Study of a New Four-layer-substrate Closing Device
محل انتشار: بیست و یکمین کنفرانس مهندسی برق ایران
سال انتشار: 1392
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 1,272
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شناسه ملی سند علمی:
ICEE21_060
تاریخ نمایه سازی: 27 مرداد 1392
چکیده مقاله:
Creating high power electrical pulses with sub nanosecond rise time is possible by using fast impact ionization process in closing four-layer-substrate devices. Fast impactionization in semiconductor devices is one of the quickest nonoptical pulse generation methods even in the range of less thannanosecond. In this paper electron-hole plasma generation and fast impact ionization mechanism of a four-layer-substrate device would be discussed by using numerical study and also physical model, Effective factors such as impurity concentration and substrate thickness in switching velocity, current peak,generated electron-hole plasma and residual voltage in device . This study provides several optimized characteristics in these switches.
نویسندگان
Tara afra
South Tehran Branch
Seyed Nasrolah Anousheh
CentralTehran branch
Morteza Fathipour
Tehran university