Influence of Physical Parameters on Microwave Noise Characteristics of AlGaN/GaN/In0.1Ga0.9N/GaN Double-Heterojunction HEMTs

The noise characteristics of AlGaN/GaN/In0.1Ga0.9N/GaN DH-HEMT are calculated as a function of gate voltage as well as drain voltage. The Alpercentage of barrier is changed. It is shown that the minimumnoise figure decreases when the Al percentage of barrier increases. Also minimum Noise Figure (NFmin) is calculated fordifferent physical parameters. It is shown that the minimum noise figure decreases when the distance between source-gate or gate-drain decrease, or when the gate length decreases