Triangular Multi-Band Terahertz Antenna Based on Gallium Arsenide Semiconductor

A multi-band terahertz antenna, based on gallium arsenide with relative permittivity of 12.94, is proposed in this paper. The antenna has nine bandwidths in the terahertz frequency region with nine resonant frequencies at 3.53 THz, 5.26 THz, 6.85 THz, 8.43 THz, 10.07 THz, 11.58 THz, 12.93 THz, 14.53 THz and 15.95 THz, that make it suitable for advanced wireless communication. This antenna has a simple and planar structure. In the designing process, several dielectric materials with different dielectric constants and also double-layer dielectric structures are studied. At this point, the results are shown and compared. The E-field and H-field are also shown.

کلیدواژه ها:

Terahertz antenna ، Multi-band ، Double-layer dielectric ، Gallium arsenide ، Silicon