A Stable and Low Power Bandgap design Employing Lubister Devices in FinFET Technology

سال انتشار: 1392
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 1,553

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شناسه ملی سند علمی:

ICEEE05_035

تاریخ نمایه سازی: 3 آذر 1392

چکیده مقاله:

this paper describes the design of a bandgap reference, implemented in 32 nm FinFET technology. The paper introduced new method for increasing stability of output voltage of bandgap circuit. The conventional BJT pair in the BGR circuit is replaced by lubister diodes with a nob to changethe voltage value over them in the presence of the same current. To increase the speed of the start-up, stable and speedy employing of FinFET’s back gate. This circuit generates a reference voltage of 300mV and has a variation about 0.041% versus temperature in TT corner. High gain OTA utilized in thefeedback loop was designed by innovative SOI FinFET devices. FinFET OTA used in this work is very low power and highspeed compared to conventional CMOS designs. It was testedwith supply voltages between 0.7 and 0.9 volt - C. The variation of output voltage versus VDDvariation is lower than 0.01% in TT corner. This circuit works in a current feedback mode, and it generates its own reference current, resulting in a stable operation. For resistor and diode connected transistor the technology elements were used instead of ideal components. The technology in use is 32 nm PTM

نویسندگان

Mohsen Jafari

School of Electrical and Computer, Collage of Engineering, University of Tehran, Tehran, Iran,

Mohsen Imani

School of Electrical and Computer, Collage of Engineering, University of Tehran, Tehran, Iran

Morteza Fathipour

Associated professor of electronic engineering, School of Electrical and Computer, Collage of Engineering, University of Tehran, Tehran, Iran,

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  • Lahiri, A. and N. Agarwal, Design of sub-1-V CMOS bandgap ...
  • International Conference on. 2012. IEEE. ...
  • Basyurt, P.B. and D.Y. Aksin, Untrimmed 6.2 ppm/ C bulk-isolated ...
  • Papers, 2009. ISSCC 2009. IEEE International. 2009. IEEE. ...
  • Cao, Y., et al., A 4.5 MGy TD-Tolerant CMOS Bandgap ...
  • Jiang, Y. and E.K.F. Lee. A low voltage low 1/f ...
  • Tao, T., et al. A 1.8 V low noise threshold ...
  • In ternational. 2002. IEEE. ...
  • Knoblinger, G., et al. Design and evaluation of basic analog ...
  • Crupi, G., et al., A comprehensive review on microwave FinFET ...
  • Mishra, P., A. Muttreja, and N.K. Jha, FinFET Circuit Design. ...
  • Underlapped FinFET, and Temperature Effect. Circuits and Systems _ _ ...
  • Gupta, V. and G. Rincon-Mora, Low-ou tput-impedance 0.6 um CMOS ...
  • نمایش کامل مراجع