Numerical analysis of long channel CNT-FET by considering field dependent mobility

While much numerical studies have been done for short channel carbon nanotube field effect transistors (CNT-FETs),there are only a few numerical reports for long channel devices. The Long channel CNT-FETs are widely used inChemical sensors and biosensors as well as light emitters. Therefore numerical study is helpful to better understandingthe behavior of such devices. In this paper, we numerically analyze long-channel CNT-FETs. To increase the accuracyof simulation, especially for the case of higher bias, filed-dependent mobility was applied to the equations. Obtainedresults are in consistent with experimental data. The effect of gate voltage and CNT diameter on the current wasinvestigated.

کلیدواژه ها:

Carbon nanotube ، long channel CNT-FET ، Numerical analysis