Influence of contact doping on the performance of graphene nanoribbon field effect transistor

this paper, we investigated the device performance of Graphene Nanoribbon Field Effect Transistor (GNRFET) as a function of contact doping concentrations. The simulations were based on the non- equilibrium Green’s function (NEGF) formalism coupled with a two dimensional Poisson equation under ballistic regime in mode space representation. By applying proper symmetric source and drain doping concentrations, It was observed that the GNRFET with low doping concentration has higher transconductance, lower Subthreshold Swing, lower off- current (Ioff), and higher ratio of on-current to off- current (Ion/Ioff). Moreover, The GNRFET with high doping concentration has smaller quantum capacitance, higher intrinsic cut- off frequency, and lower gate capacitance in comparison with low doping GNRFET.

کلیدواژه ها:

Graphene Nanoribbon FET ، Non Equilibrium Green’s function (NEGF) ، Doping concentration ، Deviceperformance