Simulation and Investigation of a rear- illuminated Gallium Arsenide High Power Photoconductive Semiconductor Switch

The performance of a linear, Gallium Arsenide (GaAs) high power photoconductive semiconductor switchhas been investigated. By means of three- dimensional device simulator, the GaAs PCSS device is designed in a newly proposed rear-illuminated, radial switch structure. This structure and also new type of illumination extends the blocking voltage by reducing the peak electric field within the switch. The material properties of semi insulating GaAs have been analysed for breakdown, photocurrent profile such as rise and fall time in terms of their applications as a photoconductive switch at high bias conditions.A three- dimensional device modeling with SILVACO ATLAS tools was used to model the optically initiated GaA switch In the simulation studies ohmic contact was assumed.

کلیدواژه ها:

Gallium arsenide ، high voltage ، photoconductive semiconductor switch