Influence of post-annealing time on sensing properties of ZnO thin films for H2 gas detection

This paper reports the post-annealing effect on the sensing properties of ZnO thin films that can be used fordevelopment of H2 gas sensors. The Zn thin films were deposited by e-beam evaporation technique and then postannealedat presence of oxygen flow for different times (30 and 60 min). Crystallographic structure of samples wasstudied by X-ray diffraction (XRD) method, while surface morphology and chemical composition of the films wereinvestigated by field emission scanning electron microscopy (FESEM). The electrical response of the ZnO films wastested to H2 gas (40-120 ppm) in the temperature range of 200-450 °C. The results showed that the maximum responsefor all samples was reached at operating temperature of 400 °C, and the H2 gas sensitivity of ZnO thin films wasimproved by increasing of annealing time.

کلیدواژه ها:

ZnO ، Thin films ، post-annealing time ، Sensing properties