The Preparation of CIGS Absorber Layers with TwoDifferent Methods

CIGS layers were fabricated by using two different methods, sputtering and thermal evaporation ofprecursors onto the Mo coated soda-lime glass (SLG) substrates. The CIG precursors were converted into CIGSabsorption thin film by selenization process. An increase of the Ga content in the active region of the absorber wasachieved by the introduction of a thin Ga layer on the Mo back contact. The effects of the using CIG precursorsprepared by various methods on the composition of CIGS thin films were investigated. The ratios of [Cu]/ [In+Ga] and[Ga]/[In+Ga] for samples were between 0.51 to 1.00 and 0.01 to 0.23 respectively. Atomic composition of Ga(45nm)/In (165nm)/Cu (155nm)/In (135nm)/Cu (65nm)/Ga (85nm) is well matched for highest efficient CIGS-basedsolar cell so far.

کلیدواژه ها:

CIGS thin films ، Sputtering ، Thermal evaporation ، Selenization