THE EFFECT OF ACCELERATED ELECTRON IRRADIATION ON THE PHOTOLUMINESCENCE OF Si/Ge1-xSix HETEROSTRUCTURE

In the given work the growth properties of Ge1-xSix epitaxil films grown on the substrates Si were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Si/Ge1-xSix changes after irradiation by accelerated electrons Ф = 5⋅1015 cm—2, surface defects which play the role of trap for the reflected particles generate.

کلیدواژه ها:

Germanium–Silicon Alloy ، Epitaxial Film ، Heterostructur ، Optical Absorption ، Electroreflection ، Energy of Electrons