Preparation and characterization of chemically deposited Cu doped ZnS thin films

The important plan in new optical technologies is fabrication of modern optical deviceswhich is obtained by using low cost and high efficiencies, non-toxic, and environmentalfriendly nanomaterials [1, 2]. In the present study, the Cu doped ZnS (ZnS:Cu) thin filmswere deposited by the chemical bath deposition method at 80 °C and at pH of 6. The films arecharacterized by several techniques such as X-ray diffraction, scanning electron microscopy,optical transmittance and fluorescence spectrophotometer. Measurements, such as thoseoutlined above, allow quantitative analysis of the increase in band gap energy due to quantumconfinement effects between the conduction and valence bands.