A Dynamic Simulation on Single Gate Junctionless Field EffectTransistor Based on Genetic Algorithm

We study the I-V characteristics of single gate junctionless fieldeffect transistor by device simulation. The sample FET issimulated at different channel lengths and the I-V curve changesdue to variations of and channel length have been systematicallyanalyzed. The new approach exhibited here utilizes a GeneticAlgorithm to select the important physical and heuristic elementsin order to define a compact yet precision model for Single GateJunctionless Field Effect Transistor characteristic. The resultsshow that the mean absolute percent error (MAPE), root-meansquaredeviation (RMSD) and standard deviation error (SDE)were at an acceptable level

کلیدواژه ها:

Single Gate ، Junctionless Field EffectTransistor ، Device Simulation ، Genetic Algorithm