Hopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2
محل انتشار: ماهنامه بین المللی مهندسی، دوره: 30، شماره: 11
سال انتشار: 1396
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 295
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شناسه ملی سند علمی:
JR_IJE-30-11_019
تاریخ نمایه سازی: 1 اردیبهشت 1397
چکیده مقاله:
The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we found the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers
کلیدواژه ها:
نویسندگان
V.S Zakhvalinskii
Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia
M ALAM
University of Asia Pacific, Department of Electrical and Electronic Engineering, Dhaka, Bangladesh
T.B Nikulicheva
Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia
E Lahderanta
Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta, Finland