Design and simulation of semiconductor laser with GaAs active region

سال انتشار: 1394
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 633

فایل این مقاله در 7 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

JR_IJMEC-5-16_011

تاریخ نمایه سازی: 16 فروردین 1395

چکیده مقاله:

In this paper, we focus on designing and simulation of a gallium arsenide semiconductor laser with an active zone. We've used aluminum gallium arsenide material in the sides with the mole fraction of 0.5 (Al0.5Ga0.5As). For simulation we have used the SILVACO software of ATLAS simulator environment. First, we review a structure similar to the laser and then to achieve proper optical confinement and carrier confinement, we use several structures to design the laser. Simulation results show that the laser emits photons at a wavelength of 0.87 micrometers. The obtained results indicate that laser shows its proper performance in IR light.

کلیدواژه ها:

نویسندگان

Gholamhosein Moloudian

Department of Electrical Engineering, Islamic Azad University, Behbahan Branch, Behbahan, Iran

Mosayeb Nouri

Department of Electrical Engineering, Islamic Azad University, Behbahan Branch, Behbahan, Iran