Future Nano chip with (La, Sr) CoO3 (LSCO)

Shrinking the chip device size down to nano scale range, caused that SiO2 could not be as a good gate dielectric for the next CMOS (Complementary Metal Oxide Semiconductor) devices. A very obvious alternative material is (La,Sr) CoO3 (LSCO), due to its high dielectric constant, wide band gap and good thermal stability on silicon substrate. We have thus demonstrated a number of processes to synthesize LSCO and studied its nano structural properties with using XRD (X-ray diffraction), FT-IR (Fourier transform infrared spectroscopy), SEM (Scanning Electron Microscopy) and AFM (Atomic Force Microscopy) techniques. The obtained results show that LSCO (at 500 0C with amorphous structure) with high dielectric constant (~16) and lower leakage current can be introduced as a good gate dielectric for the future of CMIS (Complementary Metal Insulator Semiconductor) device

کلیدواژه ها:

Nano chip ، gate dielectric ، Sol-gel method and LSCO